Document Details

Document Type : Article In Journal 
Document Title :
TEMPERATURE DEPENDENCE OF THE ELECTRICAL CONDUCTIVITY AND HALL EFFECT OF THALLIUM GALLIUM DISULPHIDE SINGLE CRYSTALS
TEMPERATURE DEPENDENCE OF THE ELECTRICAL CONDUCTIVITY AND HALL EFFECT OF THALLIUM GALLIUM DISULPHIDE SINGLE CRYSTALS
 
Subject : physics 
Document Language : English 
Abstract : Single crystal of the layered compound TlGaS2 were grown by direct synthesis of their constituents. Their electrical conductivity and the Hall effect was studied as a function of the temperature, both perpendicular and parallel to the layer planes, and their behaviour proved to be highly anisotropic. The Hall-effect measurements revealed extrinsic p- type conduction with an acceptor impurity level located at 0.586 eV for sigma(perpendicular to) and at 0.43 eV for sigma(//) above the valence-band maximum. The variation of the Hall mobility and the carrier concentration with temperature were investigated. The scattering mechanism of the carriers throughout the entire temperature range of investigation was checked. The anisotropic factor was also estimated, and its temperature dependence was illustrated 
ISSN : 1584-8663 
Journal Name : CHALCOGENIDE LETTERS 
Volume : 12 
Issue Number : 11 
Publishing Year : 1435 AH
2015 AD 
Article Type : Article 
Added Date : Wednesday, August 16, 2017 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
A.T NagatNagat, A.T InvestigatorDoctorate 
S.A HusseinHussein, S.A ResearcherDoctorateseef73@gmail.com
S.E Al GarniAl Garni, S.E ResearcherDoctorate 
S.R AlharbiAlharbi, S.R ResearcherDoctorate 

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